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XN05531|XN5531 Datasheet

  • XN05531|XN5531

  • Composite Device - Composite Transistors

  • 85.76KB

  • 3頁

  • ETC

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Composite Transistors
XN05531
(XN5531)
Silicon NPN epitaxial planar type
For high-frequency/oscillation/mixing
4
2.90
+0.20
鈥?.05
1.9
鹵0.1
(0.95) (0.95)
5
6
Unit: mm
0.16
+0.10
鈥?.06
1.50
+0.25
鈥?.05
0.30
+0.10
鈥?.05
0.50
+0.10
鈥?.05
鈻?/div>
Basic Part Number
鈥?/div>
2SC3130
脳
2
10藲
1.1
+0.2
鈥?.1
(0.65)
鈥?/div>
Two elements incorporated into one package
鈥?/div>
Reduction of the mounting area and assembly cost by one half
3
2
1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
15
10
3
50
200
150
鈭?5
to
+150
Unit
V
V
V
mA
mW
擄C
擄C
1: Collector (Tr1)
2: Emitter (Tr2)
3: Collector (Tr2)
EIAJ : SC-74
0 to 0.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Marking Symbol: 5M
Internal Connection
4
Tr2
5
6
1.1
+0.3
鈥?.1
4: Base (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Tr1
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
h
FE
ratio
Symbol
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
h
FE(Small
/Large)
*1
3
Conditions
Min
10
3
2
Typ
1
Max
Unit
V
V
1
10
碌A(chǔ)
碌A(chǔ)
錚?/div>
錚?/div>
1.60
I
C
=
2 mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
10 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
4 V, I
C
=
5 mA
V
CE
=
4 V, I
C
=
5 mA
h
FE2
: V
CE
=
4 V, I
C
=
100
碌A(chǔ)
h
FE1
: V
CE
=
4 V, I
C
=
5 mA
I
C
=
20 mA, I
B
=
4 mA
V
CB
=
4 V, I
E
= 鈭?
mA, f
=
200 MHz
V
CB
=
4 V, I
E
=
0, f
=
1 MHz
V
CB
=
4 V, I
E
=
0, f
=
1 MHz
V
CB
=
4 V, I
E
= 鈭?
mA, f
=
30 MHz
75
0.50
0.75
200
0.99
400
鈭唄
FE *2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Reverse transfer capacitance
(Common base)
Collector-base parameter
V
CE(sat)
f
T
C
ob
C
rb
r
bb
' 鈥?C
C
0.5
1.4
1.9
0.9
0.25
11.8
2.5
1.1
0.35
13.5
GHz
pF
pF
ps
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Ratio between 2 elements
*2:
鈭唄
FE
=
h
FE2
/ h
FE1
Publication date: February 2004
Note) The part number in the parenthesis shows conventional part number.
SJJ00090BED
0.4
鹵0.2
鈻?/div>
Features
2.8
+0.2
鈥?.3
5藲
V
1

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